Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals
Identifieur interne : 000820 ( Main/Repository ); précédent : 000819; suivant : 000821Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals
Auteurs : RBID : Pascal:13-0312788Descripteurs français
- Pascal (Inist)
- Simulation numérique, Résonance plasmon surface, Autoassemblage, Gouttelette, Plasmon, Plasmonique, Antenne, Point quantique semiconducteur, Epitaxie jet moléculaire, Alignement vertical, Semiconducteur III-V, Focalisation, Approximation dipolaire, Indium, Couche autoassemblée, Etat solide, Rayonnement IR proche, Déplacement raie, Déplacement vers le rouge, Arséniure d'indium, Composé III-V, Arséniure de gallium, Polarisation, Angle incidence, Variation angulaire, Nanoélectronique, Substrat métal, 8116D, 7145G, 8440B, 8115H, Nanoantenne.
English descriptors
- KwdEn :
- Angular variation, Antennas, Digital simulation, Dipole approximation, Droplets, Focusing, Gallium arsenides, III-V compound, III-V semiconductors, Incidence angle, Indium, Indium arsenides, Molecular beam epitaxy, Nanoantenna, Nanoelectronics, Near infrared radiation, Plasmonics, Plasmons, Polarization, Red shift, Self-assembled layers, Self-assembly, Semiconductor quantum dots, Solid state, Spectral line shift, Surface plasmon resonance, Vertical alignment.
Abstract
Metal droplets are prominent candidates for plasmonic antennas for semiconductor quantum dots (QDs) due to compatibility with molecular beam epitaxy (MBE). They can be produced in a self-assembly process directly in the MBE chamber on substrates with buried QDs, forming vertically aligned QD-droplet pairs and thus opening the way for the synthesis of novel hybrid metal-semiconductor structures. In this paper, we have numerically studied the surface plasmon resonance in lens-shaped droplets consisted of group III metals focusing on the influence of the droplet material and tuning of the resonance position. The discrete dipole approximation method was used for simulations, and typical experimental parameters were considered. Indium was demonstrated to be efficient for plasmonic applications in the near-infrared region. The resonance position redshifts linearly with increasing droplet size and can be tuned in a wide range to match InAs/GaAs QDs emission. Large droplets support multipolar modes with specific polarization and incidence angle dependences that can be used for multichannel selective plasmonic nanoantennas. Nanodroplets of group III metals present efficient and highly tunable plasmonic structures that along with self-assemble formation make them attractive for solid-state nanophonotics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals</title><author><name sortKey="Lyamkina, Anna A" uniqKey="Lyamkina A">Anna A. Lyamkina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent'eva ave. 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Russian Quantum Center, Novaya St. 100, Skolkovo</s1><s2>143025 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Moshchenko, Sergey P" uniqKey="Moshchenko S">Sergey P. Moshchenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent'eva ave. 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0312788</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0312788 INIST</idno><idno type="RBID">Pascal:13-0312788</idno><idno type="wicri:Area/Main/Corpus">000690</idno><idno type="wicri:Area/Main/Repository">000820</idno></publicationStmt><seriesStmt><idno type="ISSN">1932-7447</idno><title level="j" type="abbreviated">J. phys. chem., C</title><title level="j" type="main">Journal of physical chemistry. C</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Angular variation</term><term>Antennas</term><term>Digital simulation</term><term>Dipole approximation</term><term>Droplets</term><term>Focusing</term><term>Gallium arsenides</term><term>III-V compound</term><term>III-V semiconductors</term><term>Incidence angle</term><term>Indium</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Nanoantenna</term><term>Nanoelectronics</term><term>Near infrared radiation</term><term>Plasmonics</term><term>Plasmons</term><term>Polarization</term><term>Red shift</term><term>Self-assembled layers</term><term>Self-assembly</term><term>Semiconductor quantum dots</term><term>Solid state</term><term>Spectral line shift</term><term>Surface plasmon resonance</term><term>Vertical alignment</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Simulation numérique</term><term>Résonance plasmon surface</term><term>Autoassemblage</term><term>Gouttelette</term><term>Plasmon</term><term>Plasmonique</term><term>Antenne</term><term>Point quantique semiconducteur</term><term>Epitaxie jet moléculaire</term><term>Alignement vertical</term><term>Semiconducteur III-V</term><term>Focalisation</term><term>Approximation dipolaire</term><term>Indium</term><term>Couche autoassemblée</term><term>Etat solide</term><term>Rayonnement IR proche</term><term>Déplacement raie</term><term>Déplacement vers le rouge</term><term>Arséniure d'indium</term><term>Composé III-V</term><term>Arséniure de gallium</term><term>Polarisation</term><term>Angle incidence</term><term>Variation angulaire</term><term>Nanoélectronique</term><term>Substrat métal</term><term>8116D</term><term>7145G</term><term>8440B</term><term>8115H</term><term>Nanoantenne</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Metal droplets are prominent candidates for plasmonic antennas for semiconductor quantum dots (QDs) due to compatibility with molecular beam epitaxy (MBE). They can be produced in a self-assembly process directly in the MBE chamber on substrates with buried QDs, forming vertically aligned QD-droplet pairs and thus opening the way for the synthesis of novel hybrid metal-semiconductor structures. In this paper, we have numerically studied the surface plasmon resonance in lens-shaped droplets consisted of group III metals focusing on the influence of the droplet material and tuning of the resonance position. The discrete dipole approximation method was used for simulations, and typical experimental parameters were considered. Indium was demonstrated to be efficient for plasmonic applications in the near-infrared region. The resonance position redshifts linearly with increasing droplet size and can be tuned in a wide range to match InAs/GaAs QDs emission. Large droplets support multipolar modes with specific polarization and incidence angle dependences that can be used for multichannel selective plasmonic nanoantennas. Nanodroplets of group III metals present efficient and highly tunable plasmonic structures that along with self-assemble formation make them attractive for solid-state nanophonotics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1932-7447</s0></fA01><fA03 i2="1"><s0>J. phys. chem., C</s0></fA03><fA05><s2>117</s2></fA05><fA06><s2>32</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals</s1></fA08><fA11 i1="01" i2="1"><s1>LYAMKINA (Anna A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MOSHCHENKO (Sergey P.)</s1></fA11><fA14 i1="01"><s1>A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrent'eva ave. 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Russian Quantum Center, Novaya St. 100, Skolkovo</s1><s2>143025 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA20><s1>16564-16570</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>549C</s2><s5>354000501935990320</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>41 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0312788</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physical chemistry. C</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Metal droplets are prominent candidates for plasmonic antennas for semiconductor quantum dots (QDs) due to compatibility with molecular beam epitaxy (MBE). 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